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| NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low-speed switching applications. Features: D High DC Current Gain: = 2500 Typ (NTE263) hFE = 3500 Typ (NTE264) D Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built-In Base-Emitter Shunt Resistor Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO ICEX Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE VCE(sat) VBE(on) IC = 5A, VCE = 3V IC = 10A, VCE = 3V Collector-Emitter Saturation Voltage IC = 5A, IB = 0.01A IC = 10A, IB = 0.1A Base-Emitter ON Voltage IC = 3A, VCE = 3V IC = 10A, VCE = 3V Dynamic Characteristics Small-Signal Current Gain Output Capacitance Small-Signal Current Gain |hfe| Cob hfe IC = 1A, VCE = 5V, ftest = 1MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, VCE = 5V, f = 1kHz 20 - 1000 - - - - 200 - pF 1000 100 - - - - - - - - - - 20000 - 2 3 2.8 4.5 V V V V IEBO VCE = 100V, IB = 0 VCE = 100V, VEB(off) = 1.5V VCE = 100V, VEB(off) = 1.5V, TC = +125C VBE = 5V, IC = 0 100 - - - - - - - - - - 1.0 300 3 5 V mA A mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. NTE263 .420 (10.67) Max C B .147 (3.75) Dia Max .110 (2.79) E .500 (12.7) Min .250 (6.35) Max NTE264 C B Base .100 (2.54) Emitter Collector/Tab .500 (12.7) Max .070 (1.78) Max E |
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